rev. a mar.2010-h03f WFY3P02 p03-3 copyright@winsemi semiconductor co.,ltd.,all rights reserved. ? 20v, p ? channel mosfet , features -3.2a, -20v, r ds(on) (max 130m ? )@v gs =-4.5v ? 1.8 v rated for low voltage gate drive sot-23 surface mount for small footprint single pulse avalanche energy rated general description this power mosfet is produced using winsemi?s advanced mos technology. this latest t echnology has been especially designed to minimize on-state r esistance, have a high rugged avalanche characteristics. this dev ices is specially well suited for load/power management for portables and computing, charging circuits and battery protection absolute maximum ratings symbol parameter value units v dss drain source voltage -20 v i d continuous drain current(note 1) steady state tc=25 ? 2.8 a tc=8 5 -1.7 t 10s tc=25 -3.2 p d total power dissipation(note 1) steady state tc=25 0.80 w t 10s 1.25 i d continuous drain current(note 2) steady state tc=25 -1.8 a tc=8 5 -1.3 p d total power dissipation(note 2) tc=25 0.42 w i dm drain current pulsed t=10s -7.5 a v gs gate to source voltage 8 v esd esd capability (note 3) c=100pf,r s = 1500 ? 225 v t j, t stg junction and storage temperature -55~150 t l maximum lead temperature for soldering purposes 260 maximum ratings are those values beyond which device damage can occur.maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics symbol parameter value units min typ max r qja thermal resistance, juncti on-to-ambient(note 1) - - 170 /w r qja thermal resistance, juncti on-to-ambient(note 1) 110 /w r qja thermal resistance, juncti on-to-ambient(note 2) 300 /w note 1: surface ? mountedonfr4boardusing1insqpadsize(cuarea=1.127insq[1oz]includingtraces) note 2: surface ? mounted on fr4 board using the minimum recommended pad size. note 3: esd rating information: hbm class 0 d g s sot-23 marking: h03f www.datasheet.in
2 / 5 WFY3P02 steady, all for your advance electrical characteristics (tc = 25c) characteristics symbol test condition min type max unit gate leakage current( note 4) i gss v gs =8v,v ds = 0 v - - 100 na drain cut ? off current( note 4) i dss v ds =-16v,v gs =0v - - -1.0 a drain ? source breakdown voltage v (br)dss i d = -250 a, v gs =0v -20 - - v gate threshold voltage v gs(th) v ds =v ds, i d =-250 a -0.40 - -1.5 v drain ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 2.8 a - 95 130 m ? v gs = ? 2.5 v, i d = ? 2.0 a 122 150 forward transconductance gfs v ds = ? 5.0 v, i d = ? 2.8 a - 6.5 - s input capacitance c iss v ds =-6v, v gs =0v, f=1mhz - 477 - pf reverse transfer capacitance c rss -80- output capacitance c oss - 127 - switching time (note 5) turn-on delay time td(on) v gs = ? 4.5 v, v ds = ? 6v, i d = ? 1.0 a, r g =6.0 ? ,rl=6 ? , -5 ns turn ? on rise time tr - 19 - turn-off delay time td(off) - 95 - turn ? off fall time tf - 65 - total gate charge qg v gs = ? 4.5 v, v ds = ? 10 v, i d = ? 2.8 a -5.48.5 nc gate ? source charge qgs - 0.8 - gate ? drain (?miller?) charge qgd - 1.1 - source ? drain ratings and characteristics (ta = 25c) characteristics symbol test condition min type max unit continuous drain reverse current i dr ----1.6a pulse drain reverse current i drp ----7.5a forward voltage (diode) v dsf i dr =-1.6a,v gs =0v - -0.82 -1.2 v note 4: pulse test: pulse width 300 s, duty cycle 3 2%. note 5: switching characteristics are independent of operating junction temperature. this transistor is an electrostatic sensitive device pleasehandlewithcaution www.datasheet.in
3 / 5 WFY3P02 steady, all for your advance fig.3 on ? resistance vs. drain current and temperature fig.5 on-resistance variation vs junction temperature fig.4 diode forward voltage vs. current fig.6 gate charge characteristics fig. 1 on-state characteristics fig.2 transfer current characteristics www.datasheet.in
4 / 5 WFY3P02 steady, all for your advance fig.8 maximum drain current vs case temperature fig.7 resistive switching time variation vs. gate resistance fig.9 drain ? to ? source leakage current vs. voltage fig.10 on ? resistance vs. drain current and temperature www.datasheet.in
5 / 5 WFY3P02 steady, all for your advance sot-23 package dimension dim millimters inches min max min max a 0.95 0.037 a1 1.90 0.074 b 2.60 3.00 0.102 0.118 c 1.40 1.70 0.055 0.067 d 2.80 3.10 0.110 0.122 e 1.00 1.30 0.039 0.051 f 0.00 0.10 0.000 0.004 g 0.35 0.50 0.014 0.020 h 0.10 0.20 0.004 0.008 i 0.30 0.60 0.012 0.024 j50 o 10 o 50 o 10 o www.datasheet.in
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